Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

被引：23

作者：

Fujibayashi, Hiroaki ^{[1
,2
]}

Ito, Masahiko ^{[1
]}

Ito, Hideki ^{[1
,3
]}

Kamata, Isaho ^{[1
]}

Naito, Masami ^{[2
]}

Hara, Kazukuni ^{[2
]}

Yamauchi, Shoichi ^{[2
]}

Suzuki, Kunihiko ^{[3
]}

Yajima, Masayoshi ^{[3
]}

Mitani, Shinichi ^{[3
]}

Suzuki, Katsumi ^{[4
]}

Aoki, Hirofumi ^{[4
]}

Nishikawa, Koichi ^{[5
]}

Kozawa, Takahiro ^{[5
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[2] DENSO Corp, Kariya, Aichi 4488681, Japan

[3] NuFlare Technol Inc, Numazu, Shizuoka 4108510, Japan

[4] Toyota Motor Co Ltd, Toyota, Aichi 4718571, Japan

[5] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH; LAYERS; SIMULATION; EPILAYERS; FLOW;

D O I：

10.7567/APEX.7.015502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation has been developed. Multiple resistance heaters ensure uniform radial temperature distribution throughout a 150-mm-diameter wafer. Enhancement of the growth rates is realized by high-speed wafer rotation under a relatively high system pressure, and growth rates of 40-50 mu m/h are achieved on 4 degrees off 4H-SiC substrates, maintaining a low defect density and a smooth surface without macrostep bunching. Excellent thickness and doping uniformities are simultaneously obtained for a 150-mm-diameter wafer at a high growth rate of 50 mu m/h. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 22 条

[11] SiCHTCVD simulation modified by sublimation etching [J].

Kitou, Yasuo ;

Makino, Emi ;

Ikeda, Kei ;

Nagakubo, Masao ;

Onda, Shoichi .

Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 :107-110

[12] HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION [J].

KORDINA, O ;

HENRY, A ;

BERGMAN, JP ;

SON, NT ;

CHEN, WM ;

HALLIN, C ;

JANZEN, E .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1373-1375

[13] 4H-SiC epitaxial layer growth by trichlorosilane (TCS) [J].

La Via, F. ;

Izzo, G. ;

Mauceri, M. ;

Pistone, G. ;

Condorelli, G. ;

Perdicaro, L. ;

Abbondanza, G. ;

Calcagno, L. ;

Foti, G. ;

Crippa, D. .

JOURNAL OF CRYSTAL GROWTH, 2008, 311 (01) :107-113

[14] 4H SiC epitaxial growth with chlorine addition [J].

La Via, Francesco ;

Galvagno, Giuseppa ;

Foti, Gaetano ;

Mauceri, Marco ;

Leone, Stefano ;

Pistone, Giuseppe ;

Abbondanza, Giuseppe ;

Veneroni, Alessandro ;

Masi, Maurizio ;

Valente, Gian Luca ;

Crippa, Danilo .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) :509-515

[15] Step-controlled epitaxial growth of SiC: high quality homoepitaxy [J].

Matsunami, H ;

Kimoto, T .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1997, 20 (03) :125-166

[16] Simulation of flow and growth phenomena in a close-spaced reactor [J].

Mihopoulos, TG ;

Hummel, SG ;

Jensen, KF .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :725-732

[17] On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters [J].

Mitrovic, B ;

Gurary, A ;

Kadinski, L .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :656-663

[18] Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) [J].

Pedersen, H. ;

Leone, S. ;

Henry, A. ;

Beyer, F. C. ;

Darakchieva, V. ;

Janzen, E. .

JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) :334-340

[19] FIRST RESULTS ON SILICON-CARBIDE VAPOR-PHASE EPITAXY GROWTH IN A NEW-TYPE OF VERTICAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR [J].

RUPP, R ;

LANIG, P ;

VOLKL, J ;

STEPHANI, D .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :37-41

[20] Newly developed high-speed rotating disk chemical vapor deposition equipment for poly-Si films [J].

Terai, F ;

Kobayashi, H ;

Katsui, S ;

Sato, Y ;

Nagatomo, T ;

Homma, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1A) :125-130

← 1 2 3 →