Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

被引：23

作者：

Fujibayashi, Hiroaki ^{[1
,2
]}

Ito, Masahiko ^{[1
]}

Ito, Hideki ^{[1
,3
]}

Kamata, Isaho ^{[1
]}

Naito, Masami ^{[2
]}

Hara, Kazukuni ^{[2
]}

Yamauchi, Shoichi ^{[2
]}

Suzuki, Kunihiko ^{[3
]}

Yajima, Masayoshi ^{[3
]}

Mitani, Shinichi ^{[3
]}

Suzuki, Katsumi ^{[4
]}

Aoki, Hirofumi ^{[4
]}

Nishikawa, Koichi ^{[5
]}

Kozawa, Takahiro ^{[5
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[2] DENSO Corp, Kariya, Aichi 4488681, Japan

[3] NuFlare Technol Inc, Numazu, Shizuoka 4108510, Japan

[4] Toyota Motor Co Ltd, Toyota, Aichi 4718571, Japan

[5] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH; LAYERS; SIMULATION; EPILAYERS; FLOW;

D O I：

10.7567/APEX.7.015502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation has been developed. Multiple resistance heaters ensure uniform radial temperature distribution throughout a 150-mm-diameter wafer. Enhancement of the growth rates is realized by high-speed wafer rotation under a relatively high system pressure, and growth rates of 40-50 mu m/h are achieved on 4 degrees off 4H-SiC substrates, maintaining a low defect density and a smooth surface without macrostep bunching. Excellent thickness and doping uniformities are simultaneously obtained for a 150-mm-diameter wafer at a high growth rate of 50 mu m/h. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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