Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots

被引：3
|
作者：
Talochkin, A. B. [1 ]
Chistokhin, I. B. [1 ]
Markov, V. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2009年 / 43卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
SI; NANOSTRUCTURES; EPITAXY;
D O I：
10.1134/S1063782609080077
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Spectra of lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots, fabricated by molecular-beam epitaxy are studied. The photoresponse caused by optical transitions between hole levels of quantum dots and Si electronic states was observed in the energy range of 1.1-0.3 eV at T = 78 K. It was shown that the electronic states localized in the region of Si band bending near the Ge/Si interface mainly contribute to lateral photoconductivity. The use of the quantum box model for describing hole levels of quantum dots made it possible to understand the origin of peaks observed in the photoconductivity spectra. A detailed energy-level diagram of hole levels of quantum dots and optical transitions in Ge/Si structures with strained Ge quantum dots was constructed.
引用
收藏
页码：997 / 1001
页数：5
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