Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure

被引：6
作者：
Inaba, Masafumi [1 ,4 ]
Kawarada, Hiroshi [1 ,2 ,3 ]
Ohno, Yutaka [1 ]
机构：
[1] Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan
[3] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, 2-8-26 Nishiwaseda, Tokyo 1690051, Japan
[4] Kyushu Univ, Fac Informat Sci & Elect Engn, Nishi Ku, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan
来源：
APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 25期
基金：
日本学术振兴会;
关键词：
CONDUCTIVITY; MOBILITY; CENTERS;
D O I：
10.1063/1.5099395
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistors are candidates for power devices that require a high breakdown field and stable, high-frequency operation. A two-dimensional hole-gas layer can form on H-terminated diamond surfaces. To understand the electrical properties of bare H-terminated diamond surfaces, we investigate the surface impurities on a H-terminated diamond surface in a vacuum-gap gate structure, which uses a H-terminated diamond channel and a vacuum gap as gate dielectrics. To obtain a bare surface without surface adsorbate, the device is annealed in a vacuum. The transconductance is increased by removing adsorbates. The mobility and interface-state density at the H-terminated diamond surface with no adsorbates are 25cm(2)V(-1)s(-1) and 1x10(12)cm(-2)eV(-1), respectively.
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页数：5
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