Development of Radiation Hard N+-on-P Silicon Microstrip Sensors for Super LHC

被引：13

作者：

Hara, Kazuhiko ^{[1
]}

Inoue, Koki

Mochizuki, Ai

Meguro, Tatsuma ^{[1
]}

Hatano, Hiromitsu ^{[1
]}

Ikegami, Yoichi ^{[2
]}

Kohriki, Takashi ^{[2
]}

Terada, Susumu ^{[2
]}

Unno, Yoshinobu ^{[2
]}

Yamamura, Kazuhisa ^{[3
]}

Kamata, Shintaro ^{[3
]}

机构：

[1] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Lab High Energy Phys, KEK, High Energy Accelerator Res Org, Inst Particle & Nucl Studies, Tsukuba, Ibaraki 305, Japan

[3] Hamamatsu Photon KK, Div Solid State, Shizuoka 4358558, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 02期

关键词：

Microstrip detector; p-bulk silicon; radiation assurance; ATLAS SEMICONDUCTOR TRACKER; STRIP DETECTORS; BARREL MODULES; READOUT; DESIGN;

D O I：

10.1109/TNS.2009.2014162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation tolerance up to 10(15) 1-MeV n(eq)/cm(2) is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n(+)-on-p sensors. We manufactured sample sensors of 1 x 1 cm in 4 '' and 6 '' processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations < 100 > and < 111 > with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.

引用

页码：468 / 473

页数：6

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