Nanopatterned sapphire substrate to enhance the efficiency of AlGaN-based UVC light source tube with CNT electron-beam

被引:14
作者
Shim, Sang Kyun [1 ,2 ]
Tawfik, Wael Z. [3 ]
Kumar, C. M. Manoj [1 ]
Liu, Shangfeng [4 ]
Wang, Xinqiang [4 ]
Lee, Naesung [5 ]
Lee, June Key [1 ,2 ]
机构
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea
[2] SBK Mat Co, Gwangju 61186, South Korea
[3] Beni Suef Univ, Fac Sci, Dept Phys, Bani Suwayf 62511, Egypt
[4] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[5] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
基金
新加坡国家研究基金会;
关键词
ELECTROCHEMICAL POTENTIOSTATIC ACTIVATION; DEEP-ULTRAVIOLET EMISSION; QUANTUM-WELLS; GAN; IMPROVEMENT; QUALITY; STRESS;
D O I
10.1039/d0tc04597g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The short wavelength of far ultraviolet C (UVC) light sources is effective for various applications that include sterilizing bacteria and viruses, water purification, and sensing. Here, a triode structure UVC light source tube operating at similar to 270 nm using a carbon nanotube (CNT) electron emitter as an excitation source is achieved to overcome the known issues with a conventional UVC-LED. The cathodoluminescence (CL) layer-based AlGaN MQW heterostructure is evaluated for UVC light emission. For comparison, the AlGaN-based MQW heterostructure was grown on a conventional sapphire substrate (CSS) and a nanopatterned sapphire substrate (NPSS). The NPSS efficiently enhanced the emission efficiency of UVC light, compared to that grown on a CSS. The output power of the UVC light source tube with AlGaN MQWs grown on NPSS was 2.33 times higher than that grown on CSS. Correspondingly, a high-power efficiency of 1.87% was demonstrated through a 2 inch light-emitting area with a low consumption energy of 18 W (anode voltage 9 kV; anode current 2 mA).
引用
收藏
页码:17336 / 17341
页数:6
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