High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

被引：34

作者：

Wang, X. J. ^{[1
]}

Zou, H. ^{[1
]}

Ocola, L. E. ^{[2
]}

Ji, Y. ^{[1
]}

机构：

[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

aluminium compounds; cobalt; copper; Hanle effect; magnetic tunnelling; spin polarised transport; spin valves; ROOM-TEMPERATURE; MAGNETIZATION; ACCUMULATION;

D O I：

10.1063/1.3182785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron metallic lateral spin valves are fabricated with AlOx tunnel junctions as spin injection and detection barriers. The spin polarization is estimated to be similar to 20%, determined by both Hanle effect and variations of device dimensions. The polarization is maintained at a large dc injection current density >2x10(6) A/cm(2). Both the spin polarization and spin diffusion length are weakly temperature dependent.

引用

页数：3

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