Oxide breakdown after RF stress: Experimental analysis and effects on power amplifier operation

The target in the design of CMOS Radio-Frequency (RF) transceivers for wireless application is the highest integration level, despite reliability issues of conventional submicron MOSFETs, due to high RF voltage and current peaks. In this scenario, this paper investigates gate-oxide breakdown under RF stress by using a class-E Power Amplifier (PA) for experiments. We will show that maximum RF voltage peaks for safe device operation are much larger than usual DC limits, and that the physical mechanism of oxide degradation is triggered by the rms value of oxide field, and not by its maximum, as generally believed. This finding has a strong impact on RF circuit designs, especially in MOSFET scaling perspectives. Finally, breakdown effects on PA. operations will be discussed.