THIN-FILM p-type ZnTe TRANSISTORS BY PHOTOLITHOGRAPHY

被引:0
作者
Lastra, G. [1 ]
Quevedo-Lopez, M. A. [2 ]
Olivas, A. [3 ]
机构
[1] Ctr Nanociencias & Nanotecnol UNAM, PCeIM, Ensenada 22860, Baja California, Mexico
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[3] Ctr Nanociencias & Nanotecnol UNAM, Ensenada 22860, Baja California, Mexico
来源
CHALCOGENIDE LETTERS | 2014年 / 11卷 / 02期
关键词
ZnTe; thin films; Cu doping; TFT; FIELD-EFFECT TRANSISTORS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we built thin-film transistors, (TFTs), with a thickness of 75 nm of p-type ZnTe by photolithography. The paths were doped at 15 mg of CuN2O6-3H(2)O before depositing the contacts of Au and Ni to build source-drain of the TFTs. (I-D-V-D) curves were measured at different gate voltages, V-G and we had approximate value of the threshold voltage and mobility.
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页码:67 / 70
页数:4
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