A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory

被引：107

作者：

Yang, Kaiyu ^{[1
]}

Li, Fushan ^{[1
]}

Veeramalai, Chandrasekar Perumal ^{[1
]}

Guo, Tailiang ^{[1
]}

机构：

[1] Fuzhou Univ, Inst Optoelectron Technol, Fuzhou 350002, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 08期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; SOLAR-CELL; EFFICIENCY; LENGTHS;

D O I：

10.1063/1.4976709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 10 3 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories. Published by AIP Publishing.

引用

页数：5

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