Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature

被引：2
作者：
Ke, Zhu [1 ]
Ye, Yang [2 ]
Jia, Li [2 ]
Weijie, Song [2 ]
机构：
[1] Human Inst Technol, Dept Math & Phys, Hengyang 421002, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2017年 / 32卷 / 01期
基金：
中国国家自然科学基金;
关键词：
room temperature; ZnO; thin films; sputtering; electrical properties; ELECTRICAL-PROPERTIES; DEPOSITION; SUBSTRATE;
D O I：
10.1007/s11595-017-1563-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-doped zinc oxide ( AZO) and Ga-doped zinc oxide ( GZO) thin films with the same doping concentration ( 3.6 at%) were deposited on glass substrates at room temperature by direct current ( DC) magnetron sputtering. Consequently, we comparatively studied the doped thin films on the basis of their structural, morphological, electrical, and optical properties for optoelectronic applications. Both thin films exhibited excellent optical properties with more than 85% transmission in the visible range. The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film. The conductivity of the GZO thin film was improved compared to that of the AZO thin film: the resistivity decreased from 1.01 x 10(-3) to 3.5 x 10(-4) Omega cm, which was mostly due to the increase of the carrier concentration from 6.5 x10(20) to 1.46 x 10(21) cm(-3). These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.
引用
收藏
页码：85 / 88
页数：4
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