A brief review of atomic layer deposition: from fundamentals to applications

被引：1513

作者：

Johnson, Richard W. ^{[1
]}

Hultqvist, Adam ^{[2
]}

Bent, Stacey F. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

MATERIALS TODAY | 2014年 / 17卷 / 05期

关键词：

YTTRIA-STABILIZED ZIRCONIA; CIGS SOLAR-CELLS; THIN-FILMS; BUFFER LAYERS; FUEL-CELLS; METAL; ALD; CHEMISTRY; GROWTH; PHOTOVOLTAICS;

D O I：

10.1016/j.mattod.2014.04.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se-2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit - from metal oxides such as Zn1-xSnxOy, ZrO2, Y2O3, to noble metals such as Pt - and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.

引用

页码：236 / 246

页数：11

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