Magnetic semiconducting diode of p-Ge1-xMnx/n-Ge layers on silicon substrate

We have synthesized Ge-based magnetic diode composed of a Mn-doped Ge film grown on lightly As-doped Ge on silicon substrate. p-Ge1-xMnx/n-Ge heterostructure behaves like a conventional diode under forward and reverse biases and works like a spin valve below Curie temperature (similar to 50 K) under zero (B=0) and nonzero (B=300 mT) magnetic fields at forward bias (+2 V). A hysteretic behavior of p-n junction current with small coercive magnetic field implies the nonvolatility of the diode. Thus, a single element of p-Ge1-xMnx/n-Ge on silicon substrate deserves nonvolatility, rectification, and spin-valve-like functionality.