Magnetic semiconducting diode of p-Ge1-xMnx/n-Ge layers on silicon substrate

被引:17
作者
Majumdar, S. [1 ]
Das, A. K. [1 ]
Ray, S. K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
关键词
Curie temperature; elemental semiconductors; germanium; germanium compounds; magnetic hysteresis; magnetic semiconductors; magnetic thin films; manganese compounds; p-n junctions; rectification; semiconductor diodes; semiconductor heterojunctions; semiconductor thin films; spin valves; TEMPERATURE FERROMAGNETISM; SPINTRONICS; METAL; MAGNETORESISTANCE; FUNDAMENTALS; INJECTION;
D O I
10.1063/1.3097235
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have synthesized Ge-based magnetic diode composed of a Mn-doped Ge film grown on lightly As-doped Ge on silicon substrate. p-Ge1-xMnx/n-Ge heterostructure behaves like a conventional diode under forward and reverse biases and works like a spin valve below Curie temperature (similar to 50 K) under zero (B=0) and nonzero (B=300 mT) magnetic fields at forward bias (+2 V). A hysteretic behavior of p-n junction current with small coercive magnetic field implies the nonvolatility of the diode. Thus, a single element of p-Ge1-xMnx/n-Ge on silicon substrate deserves nonvolatility, rectification, and spin-valve-like functionality.
引用
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页数:3
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