Ion Implantation Defects and Shallow Junctions in Si and Ge

被引：9
作者：
Napolitani, Enrico [1 ,2 ]
Impellizzeri, Giuliana [2 ]
机构：
[1] Univ Padua, Dipartimento Fis & Astron, Padua, Italy
[2] CNR IMM MATIS, Catania, Italy
来源：
DEFECTS IN SEMICONDUCTORS | 2015年 / 91卷
关键词：
TRANSIENT-ENHANCED DIFFUSION; N-TYPE DOPANTS; ELECTRICAL ACTIVATION; DISLOCATION LOOPS; INTERSTITIAL CLUSTERS; INDUCED AMORPHIZATION; PHOSPHORUS DIFFUSION; PREAMORPHIZED SI; BORON-DIFFUSION; POINT-DEFECT;
D O I：
10.1016/bs.semsem.2015.01.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：93 / 122
页数：30
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