Temperature amplification during laser heating of polycrystalline silicon microcantilevers due to temperature-dependent optical properties

被引:14
|
作者
Serrano, Justin R. [1 ]
Phinney, Leslie M. [1 ]
Rogers, James W. [2 ]
机构
[1] Sandia Natl Labs, Engn Sci Ctr, Albuquerque, NM 87185 USA
[2] Murray State Univ, Dept Engn & Phys, Murray, KY 42071 USA
基金
美国能源部;
关键词
MEMS; Optical absorption; Polysilicon; Raman thermometry; Thermal model; DAMAGE;
D O I
10.1016/j.ijheatmasstransfer.2008.12.003
中图分类号
O414.1 [热力学];
学科分类号
摘要
The absorption of optical energy and Subsequent thermal transport are investigated experimentally and numerically for 500 mu m long, 250 mu m wide, and 2.25 mu m thick polycrystalline silicon microcantilevers irradiated by an 808 nm continuous-wave laser. Temperature profiles were measured using Raman thermometry at 314 and 532 mW of laser power, and the microcantilever peak temperature was measured for laser powers up to 719 mW. A modular technique for multilayered structures is used to calculate the optical absorption in polysilicon microcantilevers, and the thermal response is then calculated with a two-dimensional, finite difference model. Very good agreement is obtained between the measured and calculated temperature profiles and peak temperatures versus laser power. The abrupt increase or amplification of peak temperature for laser powers between 415 and 440 mW is shown to be a result of peaks in the temperature-dependent optical absorptance. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2255 / 2264
页数:10
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