Energy-Conversion Properties of Si/GaAs Mesowires Containing fewer Threading Dislocations

被引:0
作者
Rohr, Jason A. [1 ]
Siddiqi, Georges [1 ]
Li, Sheng [1 ,2 ]
Chen, Christopher [3 ]
Aloni, Shaul [3 ]
Hu, Shu [1 ]
机构
[1] Yale Univ, Chem & Environm Engn, New Haven, CT 06511 USA
[2] Univ Toronto, Dept Chem, Toronto, ON M5S 3H6, Canada
[3] Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA 94720 USA
来源
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词
silicon; GaAs; mesowires; solar cells; metamorphic growth; photo-electrochemistry; liquid contact solar cells; GAAS NANOWIRES; SOLAR-CELLS; FREE GROWTH; SI; EPITAXY;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
In this preliminary study, we employed a direct metamorphic technique to grow Si/GaAs mesowires containing very few threading dislocations at the interface. Photo-electrochemistry was used as a novel approach to investigate the energy-conversion properties of large arrays of tandem Si/GaAs mesowire solar cells, in addition to study of their optoelectronics properties. By surrounding each nanowire with a liquid electrolyte, we formed radial semiconductor/electrolyte Schottky junctions, enabling a fast and direct investigation of the energy-conversion properties of the wire arrays, without fabricating any additional solid-state contacts. Our findings are important for the further understanding of design principles, and device physics, of wire-based Si/III-V tandem solar cells.
引用
收藏
页码:0243 / 0248
页数:6
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