Ionic motion during field-assisted oxidation of aluminium studied by molecular dynamics simulations

被引:11
|
作者
Gubbels-Elzas, Astrid [1 ]
Thijsse, Barend J. [1 ]
机构
[1] Delft Univ Technol, Dept Mat Sci & Engn, NL-2628 CD Delft, Netherlands
关键词
Oxidation; Alumina; Anodization; Molecular dynamics; Electric field; ReaxFF; REACTIVE FORCE-FIELD; OXIDE-FILMS; TRANSPORT; GROWTH; MODEL;
D O I
10.1016/j.commatsci.2014.03.062
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular dynamics simulations with the REAX force field were performed to model the growth of an oxide layer on (100)-oriented aluminium in three different oxidation environments: atomic oxygen gas, liquid water, and an aqueous ammonium tartrate solution. The anodizing behaviour was studied at two different temperatures (300 K and 600 K), in the absence of an external electric field and with field strengths of 0.5-2.0 V/angstrom applied over the growing oxide. The aim of this study is to determine how the ion motion in the oxide layer is affected by an electric field and by the oxidizing medium. The principal findings are that (1) O and Al ions move through the oxide via interrupted sequences of short replacement steps rather than as a continuous motion across the oxide, (2) dissociation of H2O molecules at the surface is crucial, and (3) the dependence of the ion motion on the electric field strength exhibits steps in the growth behaviour. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:196 / 202
页数:7
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