Achieving high brightness of silicon nanocrystal light-emitting device with a field-effect approach

被引：14

作者：

Chen, Jia-Rong ^{[1
,2
]}

Wang, Dong-Chen ^{[1
]}

Hao, Hong-Chen ^{[1
]}

Lu, Ming ^{[1
]}

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China

[2] Guizhou Minzu Univ, Sch Informat Engn, Guiyang 550025, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELLS; PASSIVATION; ELECTROLUMINESCENCE; LUMINESCENCE; EMISSION;

D O I：

10.1063/1.4865207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a field-effect approach to enhance the electroluminescence (EL) from a model Si nanocrystal light-emitting device (Si-NC LED). The field effects are established within the carrier injection regions of the LEDs via introducing an i-type Si layer on the top of active layer and an Al2O3 layer between the active layer and the Si substrate. The fields are consistent in polarity with the forwardly biased electric field within the LEDs. One order of magnitude increases in the EL intensity from Si-NC LED are readily achieved after introducing the field effects. (C) 2014 AIP Publishing LLC.

引用

页数：5

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