High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

被引：32

作者：

Boland, Jessica L. ^{[1
]}

Amaduzzi, Francesca ^{[2
]}

Sterzl, Sabrina ^{[1
]}

Potts, Heidi ^{[2
]}

Herz, Laura M. ^{[1
]}

Fontcuberta i Morral, Anna ^{[2
]}

Johnston, Michael B. ^{[1
]}

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England

[2] Ecole Polytech Fed Lausanne, Lab Semicond Mat, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2018年 / 18卷 / 06期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会; 瑞士国家科学基金会;

关键词：

InAsSb nanowires; quasi-pure-phase; Raman spectroscopy; THz spectroscopy; enhanced photoconductivity lifetimes; enhanced mobility; FIELD-EFFECT TRANSISTORS; MOLECULAR-BEAM EPITAXY; CORE-SHELL NANOWIRES; RAMAN-SCATTERING; GAAS NANOWIRES; SEMICONDUCTOR NANOWIRES; SOLAR-CELLS; TERAHERTZ DETECTORS; LO-PHONON; N-INAS;

D O I：

10.1021/acs.nanolett.8b00842

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm(2) V-1 s(-1) at 10 K.

引用

页码：3703 / 3710

页数：8

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