Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High-k Gate Dielectric Material

被引：32

作者：

Raval, Harshil Narendra ^{[1
]}

Tiwari, Shree Prakash ^{[1
]}

Navan, Ramesh R. ^{[1
]}

Mhaisalkar, Subodh G. ^{[2
]}

Rao, V. Ramgopal ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Ctr Nanoelect, Bombay 400076, Maharashtra, India

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Bootstrapping; high-k dielectric; inverter organic field-effect transistor (OFET); TRANSISTORS; DRIVER; LAYER;

D O I：

10.1109/LED.2009.2016679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the boot-strapped inverter showing good results with a dc gain (A(v)) of -1.7 and V-OH and V-OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.

引用

页码：484 / 486

页数：3

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