Valley physics in tin (II) sulfide

被引:109
作者
Rodin, A. S. [1 ]
Gomes, Lidia C.
Carvalho, A.
Neto, A. H. Castro
机构
[1] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; POLARIZATION; GRAPHENE; MOS2;
D O I
10.1103/PhysRevB.93.045431
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional (2D) form of this material using a combination of ab initio calculation and k . p theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material, where there are two pairs of valleys, each placed along the two perpendicular axes, which can be selected exclusively with linearly polarized light, and can be separated using nonlocal electrical measurements.
引用
收藏
页数:5
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