Defect Saturation with Carriers in GaN/InGaN LEDs

被引：1

作者：

Nag, Dhiman ^{[1
]}

Laha, Apurba ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Mumbai, Maharashtra, India

来源：

2021 PHOTONICS NORTH (PN) | 2021年

关键词：

RC modeling; CV response; green gap; InGaN;

D O I：

10.1109/PN52152.2021.9597968

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Non-radiative defects play a major detrimental role by escalating SRH recombination in InGaN LEDs, especially with high Indium composition. Saturation of the defects with injected carriers is well known for various materials. However, this phenomenon is not studied widely for LEDs. This paper highlights some of the pioneering experimental and theoretical advancements toward understanding the concept that not all defects in LEDs participate in SRH recombination, instead part of them get saturated with carriers.

引用

页数：1

共 4 条

[1]

Nag D., 2021, CURR CONTENTS, V10

[2] Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime [J].

Nag, Dhiman ;

Aggarwal, Tarni ;

Sinha, Shreekant ;

Sarkar, Ritam ;

Bhunia, Swagata ;

Chen, Yi-Fan ;

Ganguly, Swaroop ;

Saha, Dipankar ;

Horng, Ray-Hua ;

Laha, Apurba .

ACS PHOTONICS, 2021, 8 (03) :926-932

[3] Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime [J].

Nag, Dhiman ;

Sarkar, Ritam ;

Bhunia, Swagata ;

Aggarwal, Tarni ;

Ghosh, Kankat ;

Sinha, Shreekant ;

Ganguly, Swaroop ;

Saha, Dipankar ;

Horng, Ray-Hua ;

Laha, Apurba .

NANOTECHNOLOGY, 2020, 31 (49)

[4] Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs [J].

Nag, Dhiman ;

Aggarwal, Tarni ;

Sarkar, Ritam ;

Bhunia, Swagata ;

Ganguly, Swaroop ;

Saha, Dipankar ;

Laha, Apurba .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2019, 36 (03) :616-623

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