Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

被引：87

作者：

Mohseni, H ^{[1
]}

Michel, E ^{[1
]}

Sandoen, J ^{[1
]}

Razeghi, M ^{[1
]}

Mitchel, W ^{[1
]}

Brown, G ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 mu m and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33 x 10(9) cm Hz(1/2)/W at 10.3 mu m at 78 K. (C) 1997 American Institute of Physics.

引用

页码：1403 / 1405

页数：3

共 15 条

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