Growth and characterization of organic scintillation single crystal 1,1,4,4-Tetraphenyl-1,3-Butadiene (TPB) using vertical Bridgman technique

被引:12
作者
Kumar, D. Arun [1 ]
Babu, Ravi Shanker [1 ]
Kalainathan, S. [1 ]
机构
[1] Vellore Inst Technol, Ctr Crystal Growth, Vellore 632014, Tamil Nadu, India
关键词
1,1,4,4-Tetraphenyl,1,3-Butadiene; Scintillation crystal; Bridgman technique; Lifetime analysis; Photoluminescence; Etching; LASER DAMAGE THRESHOLD; OPTICAL-PROPERTIES; FLUORESCENCE; MICROHARDNESS; PHOTOCONDUCTIVITY;
D O I
10.1016/j.optmat.2020.110286
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Studies on organic scintillation single crystal 1,1,4,4-Tetraphenyl-1,3-Butadiene (TPB) grown by vertical Bridgman technique for the first time is reported. Structural analysis was carried out with Single crystal and Powder X-ray diffractometer which is confirmed the cell parameters of the grown crystal. A definite vibrational analysis was identified on the fundamental modes of vibration. The refractive index of 1.618 was recorded by Abbe refractometer. UV-Vis near IR spectrum was used to determine the absorption edge and found to be 419 nm. The bandgap energy of the crystal was found to be 2.89 eV. Fluorescence spectra of the crystal exhibit a broad emission band at 440 nm. The fluorescence lifetime of TPB measured by TCSPC method reveals a short decay time of 16 ns for prompt and 40 ns for delayed. Photoconductivity of TPB exhibits the positive photoconductivity nature. The Vickers microhardness were used to determine the hardness number (H-upsilon) and Meyers index of the grown crystal. Essential Mechanical properties such as stiffness constant and yield strength were calculated. Chemical etching was carried out to study the defects and growth mechanism involved in the grown crystal and the etching characteristics of the crystal surface enunciate the 2-dimensional layer growth.
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页数:7
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