Photocarrier dynamics in transition metal dichalcogenide alloy Mo0.5W0.5S2

被引：8
作者：
He, Jiaqi [1 ,2 ]
He, Dawei [1 ]
Wang, Yongsheng [1 ]
Zhao, Hui [2 ]
机构：
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
[2] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
来源：
OPTICS EXPRESS | 2015年 / 23卷 / 26期
基金：
美国国家科学基金会;
关键词：
TUNABLE BAND-GAP; VALLEY POLARIZATION; MONOLAYER; MOS2(1-X)SE2X; GROWTH; PHOTOLUMINESCENCE; EXCITONS; MOS2;
D O I：
10.1364/OE.23.033370
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a transient absorption study of photocarrier dynamics in transition metal dichalcogenide alloy, Mo0.5W0.5S2. Photocarriers were injected by a 400-nm pump pulse and detected by a 660-nm probe pulse. We observed a fast energy relaxation process of about 0.7 ps. The photocarrier lifetime is in the range of 50 - 100 ps, which weakly depends on the injected photocarrier density and is a few times shorter than MoS2 and WS2, reflecting the relatively lower crystalline quality of the alloy. Saturable absorption was also observed in Mo0.5W0.5S2, with a saturation energy fluence of 32 mu J cm(-2). These results provide important parameters on photocarrier properties of transition metal dichalcogenide alloys. (C) 2015 Optical Society of America
引用
收藏
页码：33370 / 33377
页数：8
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