Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst

被引：81

作者：

Fu, Qian-Gang ^{[1
]}

Li, He-Jun ^{[1
]}

Shi, Xiao-Hong ^{[1
]}

Li, Ke-Zhi ^{[1
]}

Wei, Jian ^{[1
]}

Hu, Zhi-Biao ^{[1
]}

机构：

[1] Northwestern Polytech Univ, CC Composites Res Ctr, Lab Superhigh Temp Composites, Xian 710072, Shaanxi, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2006年 / 100卷 / 01期

基金：

中国国家自然科学基金;

关键词：

chemical vapor deposition (CVD); nanostructure; crystal growth;

D O I：

10.1016/j.matchemphys.2005.12.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using CH3SiCl3 (NITS) and H as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal beta-SiC structure, with diameters of about 70 nm. As the increasing of deposition temperature, or as the decreasing of H-2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. beta-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：108 / 111

页数：4

共 14 条

[1] Mass production of single-wall carbon nanotubes by the arc plasma jet method [J].