Thermoelectric properties of AgPbmSbTem+2 (12≤m≤26) at elevated temperature

被引：28

作者：

Dow, H. S. ^{[2
]}

Oh, M. W. ^{[1
]}

Park, S. D. ^{[1
]}

Kim, B. S. ^{[1
]}

Min, B. K. ^{[1
]}

Lee, H. W. ^{[1
]}

Wee, D. M. ^{[2
]}

机构：

[1] Korea Electrotechnol Res Inst, Adv Mat & Applicat Res Div, Chang Won 641120, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 11期

关键词：

ELECTRICAL-PROPERTIES; AG1-XPB18SBTE20 X=0; MICROSTRUCTURE;

D O I：

10.1063/1.3138803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the thermoelectric properties of AgPbmSbTem+2 (LAST-m, m = 12, 16, 18, 20, 22, and 26), including the Seebeck coefficient, the electrical resistivity, and the thermal conductivity, were studied in the temperature range from 323 to 773 K. The Seebeck coefficient and the electrical resistivity exhibited the behavior of a degenerate semiconductor. The measured results of the carrier concentration supported the conclusions of the electrical transport properties. The lowest electrical resistivity and the thermal conductivity were observed, which leads to the best thermoelectric performance in LAST-18 and the dimensionless figure of merit ZT value of 0.8 at 773 K. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3138803]

引用

页数：5

共 22 条

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