Modeling and simulation opportunities for 3D integrated circuits

被引：0

作者：

Bloomfield, MO ^{[1
]}

Prasad, V ^{[1
]}

Iverson, RB ^{[1
]}

Lu, J ^{[1
]}

Maniatty, AM ^{[1
]}

Le Coz, YL ^{[1
]}

Cale, TS ^{[1
]}

机构：

[1] Focus Ctr, Rensselaer, NY USA

来源：

ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001) | 2001年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We discuss selected modeling and simulation opportunities that are particularly important to the design and processing of 3D ICs, though they are relevant to traditional 2D ICs as well. Processes we focus on are atomic layer deposition and electrochemical deposition. Physical design issues highlighted are the stability of copperibarrier filled through-wafer vias in silicon, and a new approach to thermal modeling.

引用

页码：411 / 415

页数：5

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