Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell

被引：169
|
作者：
Jeong, Doo Seok [1 ,1 ]
Schroeder, Herbert
Waser, Rainer
机构：
[1] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 19期
关键词：
cells (electric); electrochemistry; platinum; Schottky barriers; solid electrolytes; switching; titanium compounds; vacancies (crystal); OXYGEN; RESISTANCE; SRTIO3;
D O I：
10.1103/PhysRevB.79.195317
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.
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页数：10
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