Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory

被引：66

作者：

Liu, B ^{[1
]}

Zhang, T

Xia, JL

Song, ZT

Feng, SL

Chen, B

机构：

[1] Chinese Acad Sci, Res Ctr Funct Semicond Film Engn & Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

关键词：

D O I：

10.1088/0268-1242/19/6/L01

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge2Sb2Te5 films were deposited by RF magnetron sputtering on Si(100)/SiO2 substrates. N+ ion was implanted into Ge2Sb2Te5 films. Two obvious steps were observed in the resistance-temperature curve of the Ge2Sb2Te5-N film with a minor nitrogen implant dose. The two steps may change into one step because the phase transition from FCC to hexagonal structure was suppressed by nitrogen implantation if the nitrogen implant dose is higher than 4.51 x 10(16) cm(-2). The favourite nitrogen implant dose is about 6.44 x 10(15) to 1.92 x 10(16) cm(-2) in our study. This phenomenon is very important for multilevel storage. Three-level storage with Ge2Sb2Te5-N media for chalcogenide random access memory (C-RAM) can be performed easily, and hence, the capacity of GRAM will be dramatically increased.

引用

页码：L61 / L64

页数：4

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