Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

被引：26
作者：
Lam, HK
Dai, JY [1 ]
Chan, HLW
机构：
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 268卷 / 1-2期
关键词：
diamond; lithium niobate; sapphire; surface acoustic wave device;
D O I：
10.1016/j.jcrysgro.2004.04.111
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Lithium niobate (LiNbO3) epitaxial films were deposited on (0 0 0 1) and (1 120) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3 films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100 mTorr) favors a-oriented LiNbO3 film growth while higher oxygen pressure (500 mTorr) favors c-oriented growth. A two step film growth process (growth at 500 mTorr oxygen pressure for 15 s followed by 12 min growth at 100 mTorr oxygen pressure at 650degreesC) was developed to deposit surface-flat c-oriented LiNbO3 films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond. (C) 2004 Elsevier B.V. All rights reserved.
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页码：144 / 148
页数：5
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