Spray pyrolyzed β-In2S3 thin films:: Effect of postdeposition annealing

被引：35
作者：
John, Teny Theresa
Kartha, C. Sudha
Vijayakumar, K. P. [1 ]
Abe, T.
Kashiwaba, Y.
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Thin Film Photovolta Div, Kochi, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
来源：
VACUUM | 2006年 / 80卷 / 08期
关键词：
spray pyrolysis; In2S3 thin films; vacuum annealing; resistivity; grain size;
D O I：
10.1016/j.vacuum.2005.11.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400 degrees C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated using the envelope method. Annealing did not affect the optical properties of the film much, but the resistivity of the films showed a drastic decrease and the grain size increased. In2S3 thin films have potential use as buffer layer in photovoltaic heterojunction devices. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：870 / 875
页数：6
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