Crystallization and Raman shift of array-orderly silicon nanowires after annealing at high temperature

被引：0

作者：

Niu, J ^{[1
]}

Sha, I

Yang, Q

Yang, DR

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 7A期

关键词：

nanowires; silicon; crystalline; annealing;

D O I：

10.1143/jjap.43.4460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs,with nearly amorphous structure were fabricated at 500degreesC; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800degreesC. The average diameter and length of the SiNWs are 40-70 nm and 10 mum, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.

引用

页码：4460 / 4461

页数：2

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