Crystallization and Raman shift of array-orderly silicon nanowires after annealing at high temperature

被引：0
|
作者：
Niu, J [1 ]
Sha, I
Yang, Q
Yang, DR
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 7A期
关键词：
nanowires; silicon; crystalline; annealing;
D O I：
10.1143/jjap.43.4460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs,with nearly amorphous structure were fabricated at 500degreesC; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800degreesC. The average diameter and length of the SiNWs are 40-70 nm and 10 mum, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
引用
收藏
页码：4460 / 4461
页数：2
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