Atomic layer deposition of ZnO: a review

被引:345
|
作者
Tynell, Tommi [1 ]
Karppinen, Maarit [1 ]
机构
[1] Aalto Univ, Dept Chem, FI-00076 Aalto, Finland
基金
芬兰科学院;
关键词
ZnO; atomic layer deposition; thin film; AL-DOPED ZNO; LIGHT-EMITTING-DIODES; GAS-SENSING PROPERTIES; FILM SOLAR-CELLS; ALUMINA SPINEL FORMATION; PULSED-LASER DEPOSITION; NATIVE POINT-DEFECTS; OXIDE THIN-FILMS; NEAR-BAND-EDGE; ZINC-OXIDE;
D O I
10.1088/0268-1242/29/4/043001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more and more interest in the last 20 years as a potential material for applications such as thin-film transistors, light-emitting diodes and gas sensors. At the same time, the increasingly stringent requirements of the microelectronics industry, among other factors, have led to a dramatic increase in the use of atomic layer deposition (ALD) technique in various thin-film applications. During this time, the research on ALD-grown ZnO thin films has developed from relatively simple deposition studies to the fabrication of increasingly intricate nanostructures and an understanding of the factors affecting the fundamental properties of the films. In this review, we give an overview of the current state of ZnO ALD research including the applications that are being considered for ZnO thin films.
引用
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页数:15
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