Direct measurements of interfacial adhesion in 2D materials and van der Waals heterostructures in ambient air

被引:122
作者
Rokni, Hossein [1 ]
Lu, Wei [1 ,2 ]
机构
[1] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; ULTRASTRONG ADHESION; CHARGE INHOMOGENEITY; SINGLE-LAYER; GRAPHENE; WETTABILITY; WATER; MICROSCOPY; RESISTANCE;
D O I
10.1038/s41467-020-19411-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Interfacial adhesion energy is a fundamental property of two-dimensional (2D) layered materials and van der Waals heterostructures due to their intrinsic ultrahigh surface to volume ratio, making adhesion forces very strong in many processes related to fabrication, integration and performance of devices incorporating 2D crystals. However, direct quantitative characterization of adhesion behavior of fresh and aged homo/heterointerfaces at nanoscale has remained elusive. Here, we use an atomic force microscopy technique to report precise adhesion measurements in ambient air through well-defined interactions of tip-attached 2D crystal nanomesas with 2D crystal and SiOx substrates. We quantify how different levels of short-range dispersive and long-range electrostatic interactions respond to airborne contaminants and humidity upon thermal annealing. We show that a simple but very effective precooling treatment can protect 2D crystal substrates against the airborne contaminants and thus boost the adhesion level at the interface of similar and dissimilar van der Waals heterostructures. Our combined experimental and computational analysis also reveals a distinctive interfacial behavior in transition metal dichalcogenides and graphite/SiOx heterostructures beyond the widely accepted van der Waals interaction.
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页数:14
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