Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

被引：25

作者：

Oogane, Mikihiko ^{[1
]}

McFadden, Anthony P. ^{[2
]}

Fukuda, Kenji ^{[1
]}

Tsunoda, Masakiyo ^{[3
]}

Ando, Yasuo ^{[1
]}

Palmstrom, Chris J. ^{[2
,4
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 26期

基金：

日本科学技术振兴机构;

关键词：

Anisotropy - Molecular beam epitaxy - Cobalt alloys - Molecular beams - Damping - Spin polarization - Manganese alloys - Crystallinity - Silicon alloys;

D O I：

10.1063/1.5030341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Published by AIP Publishing.

引用

页数：5

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