Effect of barrier thickness on strain uniformity of wire in laterally aligned InGaAs/GaAs quantum wire nanostructures

被引：1
作者：
Yoo, YH
Lee, W
Shin, H [1 ]
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Yonsei Univ, Sch Mat Sci & Engn, Seoul 120749, South Korea
[3] Agcy Def Dev, R&D Ctr 1, Taejon 305600, South Korea
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 07期
关键词：
barrier thickness; quantum wire; strain uniformity;
D O I：
10.1016/j.ssc.2004.02.036
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of barrier thickness on strain uniformity of a laterally aligned array of InGaAs quantum wire in GaAs matrix has been investigated with the finite elements method. A decrease in GaAs barrier thickness was predicted to assist the InGaAs wire to maintain its strain state in the central region up to a longer distance towards the edge of the wire along the width direction. It is suggested that. by reducing the spacing between the quantum wires, it is possible to improve Uniformity of strains within the wire, thereby yielding more uniform opto-electronic properties such as sharp and narrow peaks in photoluminescence spectra. (C) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：487 / 490
页数：4
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