Laser-assisted antihydrogen formation

被引:8
作者
Chattopadhyay, A. [1 ]
Sinha, C. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Theoret Phys, Kolkata 700032, W Bengal, India
来源
PHYSICAL REVIEW A | 2006年 / 74卷 / 02期
关键词
D O I
10.1103/PhysRevA.74.022501
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Laser-assisted antihydrogen ((H) over bar) formation cross sections (differential and total) for collisions of antiprotons with positronium (Ps) are studied in the framework of the eikonal approximation for two geometries, when the field polarization is parallel (parallel to(L)) or perpendicular (perpendicular to(r)) to the incident Ps momentum. The variations of the (H) over bar formation cross sections with respect to the field strength and the laser photon energy are studied for the multiphoton (absorption and emission) processes. The contribution of the atomic (both Ps and (H) over bar) dressing terms to the enhancement of the (H) over bar formation cross section is studied for both the geometries (parallel to(L) and perpendicular to(r)). The most important prediction from the present work is the enhancement of the field-free (FF) (H) over bar formation cross sections particularly at lower incident energies when the system (Ps+(p) over bar) is irradiated by a single mode, linearly polarized laser, the enhancement being more pronounced for a wider range of incident energy in the perpendicular to(r) geometry than in the parallel to(L) one.
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页数:11
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