Influence of Phosphorus Concentrations in a-SiN:H Gate Layer on Electron Mobility in Thin Film Transistors

被引：0

作者：

Kim, Jun-Woo ^{[1
]}

Sohn, Young-Soo ^{[2
]}

Choi, Sie-Young ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

[2] Catholic Univ Daegu, Gyeongbuk 712702, South Korea

来源：

ULSI PROCESS INTEGRATION 6 | 2009年 / 25卷 / 07期

关键词：

D O I：

10.1149/1.3203991

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Characteristics of hydrogenated amorphous silicon thin-film transistors(a-Si:H TFTs) with various phosphorus doping concentrations in an a-SiN:H layer have been investigated. The a-Si:H TFTs with the heterostructure of phosphorus-contained a-SiN:H and intrinsic a-Si:H films have been fabricated by plasma enhanced chemical vapor deposition using SiH4, PH3 and NH3 gases. The mobility and threshold voltage of the devices have been investigated and compared with conventional amorphous silicon thin film transistors.

引用

页码：525 / 530

页数：6

共 9 条

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