Top-down fabrication of large-area GaN micro- and nanopillars

被引:40
作者
Debnath, Ratan [1 ,2 ]
Ha, Jong-Yoon [1 ,3 ]
Wen, Baomei [1 ,2 ]
Paramanik, Dipak [1 ]
Motayed, Abhishek [1 ,3 ]
King, Matthew R. [4 ]
Davydov, Albert V. [1 ]
机构
[1] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
[2] N5 Sensors Inc, Rockville, MD 20852 USA
[3] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[4] Northrop Grumman ES, Linthicum, MD 21090 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 02期
关键词
LIGHT-EMITTING-DIODES; HIGH OPTICAL-QUALITY; NANOWIRE HETEROSTRUCTURES; BLUE; LASERS;
D O I
10.1116/1.4865908
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Large-area gallium nitride (GaN) micro-and nanopillar (NP) arrays were fabricated by plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep-ultraviolet lithography, inductively coupled plasma (ICP) etching, and subsequent chemical treatments were effectively utilized to fabricate GaN pillars with diameters ranging from 250 nm to 10 mu m. The impact of various plasma etching process parameters and chemical etchants on the morphology, strain, and surface defects of these NPs were studied using scanning-electron microscopy, photoluminescence (PL), and Raman spectroscopy. It was found that the shape of the NPs can be controlled by the substrate temperature during the plasma etch and by using different gas chemistries. Room-temperature PL and Raman spectroscopy measurements revealed significant strain relaxation in 250 nm diameter pillars as compared to 10 mu m diameter pillars. PL measurement also indicated that the surface damage from the plasma etch can be removed by etching in KOH-ethylene glycol solution. Post-ICP selective wet chemical etch enabled us to fabricate functional structures such as micro-and nanodisks of GaN, which potentially could be utilized in nitride-based resonators and lasers. (C) 2014 American Vacuum Society.
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页数:6
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