A Centrifugal-Force-Assisted Wet-Etching Approach toward Top-Down Fabrication of Perovskite-Single-Crystalline Thin Films

被引:6
作者
Lv, Qianrui [1 ]
Zhang, Lijing [2 ]
机构
[1] Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China
[2] Dalian Univ Technol, Sch Chem Engn, Dept Chem, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
Crystal engineering; Crystal growth; Perovskite; Single-crystalline thin film; Wet etching; GROWTH; WAFERS;
D O I
10.1002/slct.202003921
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic-inorganic hybrid halide perovskite-single-crystalline thin films with high quality are promising for making high-performance optoelectronic devices, but their fabrication is still challenging, particularly for the top-down fabrication. Here, a facile centrifugal-force-assisted wet-etching strategy is used in fabricating hybrid perovskite-single-crystalline thin film from its single-crystalline wafer. The film thickness can be reduced to less than 20 micrometres and the film remains high quality and flat surface. Besides, this method can be used to regenerate surface-metamorphic perovskite single crystals. The present technique may provide an effective strategy for single-crystalline thin film preparation for demanding device applications and it is expected that this strategy would promise high-efficient utilization of perovskite single crystals.
引用
收藏
页码:14788 / 14791
页数:4
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