Charge neutralization using secondary electron shower for shave-off depth profiling by focused ion beam secondary ion mass spectrometry

被引：0
|
作者：
Ishizaki, Y. [1 ,2 ]
Yamamoto, T. [1 ,2 ]
Fujii, M. [1 ,2 ]
Owari, M. [1 ]
Nojima, M. [1 ,3 ]
Nihei, Y. [2 ,3 ]
机构：
[1] Univ Tokyo, IIS, Meguro Ku, Tokyo 1538505, Japan
[2] Tokyo Univ Sci, Fac Sci & Technol, Chiba 2788510, Japan
[3] Tokyo Univ Sci, Res Inst Sci & Technol, Chiba 2788510, Japan
来源：
APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期
关键词：
Shave-off; Depth profiling; Charge-up; Neutralization; FIB-SIMS;
D O I：
10.1016/j.apsusc.2008.05.103
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It is very important problem for microbeam analyses to neutralize charge-up phenomenon. In our previous study, the charge-up phenomenon occurred during the shave-off depth pro. ling in the case of insulated samples. We developed a new neutralization method to improve the accuracy of the shave-off depth profile by FIB-SIMS. By using new method, ripples on secondary ion signals were suppressed and the shave-off depth profile reflected the precise layered shape of insulator samples without charge-up problems. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1351 / 1353
页数：3
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