Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

Electrical impedance characteristics of porous silicon nanostructures (PSiNs) in frequency function were studied. PSiNs were prepared through photo-electrochemical etching method at various current densities (15-40 mA/cm(2)) and constant etching time. The atomic force microscope images of PSiNs show that pore diameter and roughness increase when current density increases to 35 mA/cm(2). The surface roughness subsequently decreases because of continuous etching of pillars, and a second etching process occurs. Photoluminescence spectra show blue and red shift with increasing applied current density that is attributed to PSiNs size. Variations of electrical resistance and capacitance values of PSiNs were measured using electrochemical impedance spectroscopy analysis. These results indicate that PSiNs prepared at 20 mA/cm(2) current density have uniform porous structures with a large number of pillars. Furthermore, this PSiNs structure influences large values of charge transfer resistance and double layer capacitance, indicating potential application in sensors.