Lithographically defined aluminum nitride cross-sectional Lame mode resonators

被引：12
作者：
Chen, G. [1 ]
Cassella, C. [1 ]
Qian, Z. [1 ]
Hummel, G. E. [1 ]
Rinaldi, M. [1 ]
机构：
[1] Northeastern Univ, Boston, MA 02115 USA
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2017年 / 27卷 / 03期
关键词：
acoustic resonators; aluminum nitride; electromechanical coupling coefficient; filters;
D O I：
10.1088/1361-6439/aa5a83
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on aluminum nitride (AlN) cross-sectional Lame mode resonators (CLMRs) showing high electromechanical coupling coefficient (k(t)(2)) in excess of 4% in a lithographically defined 307 MHz frequency range around 920 MHz. In addition, we report the performance of a CLMR showing a figure of merit (FoM, defined as the product of quality factor, Q, and k(t)(2)) in excess of 85. To the best of the authors' knowledge, such FoM value is the highest reported for AlN resonators using interdigitated metal electrodes (IDTs).
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页数：7
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