Immersion Lithography: Photomask and Wafer-Level Materials

被引:74
作者
French, Roger H. [1 ]
Tran, Hoang V. [1 ]
机构
[1] DuPont Co Inc, Cent Res, Wilmington, DE 19880 USA
基金
美国国家科学基金会;
关键词
photoresist; pellicle; high-index fluid; phase shift; double patterning; 193; NM; OPTICAL LITHOGRAPHY; REFRACTIVE-INDEX; SEMICONDUCTOR PHOTOLITHOGRAPHY; FLUOROPOLYMER RESISTS; FLUIDS; FILMS; PHOTORESISTS; FABRICATION; PELLICLES;
D O I
10.1146/annurev-matsci-082908-145350
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density.
引用
收藏
页码:93 / 126
页数:34
相关论文
共 129 条
  • [1] Abbe E., 2004, SPIE milestone series, V178, P12
  • [2] A novel resist freeze process for double imaging
    Abdallah, David J.
    Alemy, Eric
    Chakrapani, Srinivasan
    Padmanaban, Munirathna
    Dammel, Ralph R.
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2008, 21 (05) : 655 - 663
  • [3] Design of protective topcoats for immersion lithography
    Allen, RD
    Brock, PJ
    Sundberg, L
    Larson, CE
    Wallraff, GM
    Hinsberg, WD
    Meute, J
    Shimokawa, T
    Chiba, T
    Slezak, M
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) : 615 - 619
  • [4] ALPAY H, 1995, Patent No. 5415953
  • [5] Double patterning materials for sub-40nm application
    Anno, Yusuke
    Kakizawa, Tomohiro
    Hori, Masafumi
    Soyano, Akimasa
    Fujiwara, Koichi
    Nakamura, Atsushi
    Sugiura, Makoto
    Yamaguchi, Yoshikazu
    Shimokawa, Tsutomu
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2008, 21 (05) : 691 - 696
  • [6] Bencher C., 2007, NANOCHIP TECHNOL J, V2, P8
  • [7] Immersion patterning down to 27 nm half pitch
    Bloomstein, T. M.
    Fedynyshyn, T. H.
    Pottebaum, I.
    Marchant, M. F.
    Deneault, S. J.
    Rothschild, M.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 2789 - 2797
  • [8] Why optical lithography will live forever
    Brunner, TA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2632 - 2637
  • [9] Modeling and experimental investigation of bubble entrapment for flow over topography during immersion lithography
    Burnett, HB
    Wei, AC
    El-Morsi, MS
    Shedd, TA
    Nellis, GF
    Van Peski, C
    Grenville, A
    [J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2006, 5 (01):
  • [10] Measurement of the refractive index and thermo-optic coefficient of water near 193 nm
    Burnett, JH
    Kaplan, SG
    [J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (01): : 68 - 72