Immersion Lithography: Photomask and Wafer-Level Materials

被引:76
作者
French, Roger H. [1 ]
Tran, Hoang V. [1 ]
机构
[1] DuPont Co Inc, Cent Res, Wilmington, DE 19880 USA
基金
美国国家科学基金会;
关键词
photoresist; pellicle; high-index fluid; phase shift; double patterning; 193; NM; OPTICAL LITHOGRAPHY; REFRACTIVE-INDEX; SEMICONDUCTOR PHOTOLITHOGRAPHY; FLUOROPOLYMER RESISTS; FLUIDS; FILMS; PHOTORESISTS; FABRICATION; PELLICLES;
D O I
10.1146/annurev-matsci-082908-145350
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density.
引用
收藏
页码:93 / 126
页数:34
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