Electro-optic modulation in crystal-ion-sliced z-cut LiNbO3 thin films

Electro-optic modulation is demonstrated in 10-mu m-thick single-crystal LiNbO3 films obtained by crystal ion slicing. This technique uses ion implantation of single-crystal bulk samples followed by selective etching. The measured electro-optic response of these films is comparable, within experimental error, to that of single-crystal bulk LiNbO3 and is superior to previously reported values for epitaxial polycrystalline thin films. The product of half-wave voltage and modulator length, VpiL, is 8 V cm. Post lift-off annealing is shown to be of key importance in improving the modulator extinction ratio. (C) 2000 American Institute of Physics. [S0003-6951(00)01211-0].