Dielectric and piezoelectric properties of Pb(Zr0.53Ti0.47)O3-Pb(Mg1/3Nb2/3)O3 multi-layer thin films

被引：0
|
作者：
Fu, DS
Ishikawa, K
Minakata, M
Kodaira, K
Suzuki, H
机构：
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 432, Japan
[2] Shizuoka Univ, Dept Mat Sci, Hamamatsu, Shizuoka 432, Japan
[3] Yokkaichi Univ, Fac Policy Management, Yokaichi 5128512, Japan
[4] Hokkaido Univ, Grad Sch Engn, Div Mat Sci & Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
FERROELECTRICS | 2002年 / 270卷
关键词：
dielectric; piezoelectric; relaxor; PZT; PMN; thin film;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pb(Zr0.53Ti0.47)O-3-Pb(Mg1/3Nb2/3)O-3 (PZT-PMN) multi-layer thin films were prepared by a chemical solution deposition (CSD). The influences of the stacking structures on the crystallization, dielectric and piezoelectric properties of the thin films have been investigated. The film with dielectric constant about 2000 at room temperature has been obtained. It has been shown that the increase in the number of PMN layers leads to the enhancement in the dielectric properties of films. The effective longitudinal piezoelectric coefficients of the thin films have been evaluated using a charge integration technique based on direct piezoelectric effect, and a value of 67 pC/N has been observed for the unpoled film.
引用
收藏
页码：1371 / 1376
页数：6
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