THE REMOVAL RATE OF PHOSPHORUS FROM MOLTEN SILICON

被引：0

作者：

Kemmotsu, Takayuki ^{[1
]}

Kimura, Hisao ^{[1
]}

Nagai, Takashi ^{[1
]}

Maeda, Masafumi ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

TMS 2009 138TH ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 2: MATERIALS CHARACTERIZATION, COMPUTATION AND MODELING | 2009年

关键词：

silicon; phosphorus; electron beam; solar cell; PURIFICATION; EVAPORATION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An electron beam remelting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate by this process. In this research, a more efficient removal process by an electron beam remelting technique was studied. The removal rate of phosphorus appeared to increase with increase in the silicon surface temperature by raising the electron beam power.

引用

页码：277 / 280

页数：4

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